Search results for "Field effect"

Field effect in the viscosity of magnetic colloids studied by multi-particle collision dynamics

2019

Abstract Colloidal solutions of magnetic nanoparticles are usually employed when the fluidity and magnetic properties are required at the same time, either in technical or biomedical applications. However, when the magnetic size of the nanoparticles is large enough (>12–15 nm) the colloid may form an equilibrium structure with or without the external magnetic field, which can significantly influence its rheology. Using multi-particle collision dynamics we study the internal structure and viscosity of the magnetic colloids at varying magnitudes of the externally applied field. We show a generalized structural behavior across all studied regimes and an appreciable increase of flow resistance …

Enhancement of the Multipactor Threshold Inside Nonrectangular Iris

2018

Multipactor breakdown is studied inside the capacitive iris of a rectangular waveguide with a skewed slot along its longitudinal cross section. Both the iris length and height are assumed to be small compared to the electromagnetic wavelength. Therefore, the quasi-static approximation is applied so as to describe the RF field distribution inside the iris gap, whereas a 2-D model is used to analyze the electron motion. The peculiarities of RF field structure are studied using the conformal mapping approach, which shows that the electric field lines can be approximated by circular arcs when the iris length is much larger than its height. The electron motion inside the iris gap is analyzed usi…

Drift Modeling of Electrically Controlled Nanoscale Metal–Oxide Gas Sensors

2008

Gas sensors with small dimensions offer the advantage of electrical sensitivity modulation. However, their actual use is hindered by drift effects that exceed those of usual metal-oxide sensors. We analyzed possible causes and found the best agreement of experimental data with the model of internal dopant fluctuations. The dopants are oxygen vacancies exhibiting high drift-diffusion coefficients under the impact of electrical fields. Thus, the width parameters of space charge regions, which again control the sensor current, are undergoing slow changes. Moreover, the dopant distributions cause internal electrical fields that yield drift even after voltage switch-off. This behavior has been p…

Enhanced nanoscopy of individual CsPbBr3 perovskite nanocrystals using dielectric sub-micrometric antennas

2020

We demonstrate an efficient, simple, and low-cost approach for enhanced nanoscopy in individual green emitting perovskite (CsPbBr3) nanocrystals via TiO2 dielectric nanoantenna. The observed three- to five-fold emission enhancement is attributed to near-field effects and emission steering promoted by the coupling between the perovskite nanocrystals and the dielectric sub-micrometric antennas. The dark-field scattering configuration is then exploited for surface-enhanced absorption measurements, showing a large increase in detection sensitivity, leading to the detection of individual nanocrystals. Due to the broadband spectral response of the Mie sub-micrometric antennas, the method can be e…

ELECTROCHEMICAL FABRICATION OF METAL/OXIDE/CONDUCTING POLYMER JUNCTIONS FOR ELECTRONIC DEVICES

2014

Generation of even harmonics of sub-THz radiation in bulk GaAs in the presence of a static electric field

2007

The static electric field effects on nonlinear carrier dynamics in low-doped GaAs bulk under the influence of an intense sub-terahertz field are studied by a three-dimensional multivalleys Monte Carlo simulation. The conversion efficiency is calculated by using the appropriate Maxwell equation for the propagation of an electromagnetic wave along a given direction in the medium. Production of odd and even harmonics due to the nonlinearity of the velocity-field relation is investigated.

Tunable field effect properties in solid state and flexible graphene electronics on composite high – low k dielectric

2016

We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm2/V at VD = −5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexib…

Know your full potential: Quantitative Kelvin probe force microscopy on nanoscale electrical devices

2018

In this study we investigate the influence of the operation method in Kelvin probe force microscopy (KPFM) on the measured potential distribution. KPFM is widely used to map the nanoscale potential distribution in operating devices, e.g., in thin film transistors or on cross sections of functional solar cells. Quantitative surface potential measurements are crucial for understanding the operation principles of functional nanostructures in these electronic devices. Nevertheless, KPFM is prone to certain imaging artifacts, such as crosstalk from topography or stray electric fields. Here, we compare different amplitude modulation (AM) and frequency modulation (FM) KPFM methods on a reference s…

Synthesis of Graphene Nanoribbons by Ambient-Pressure Chemical Vapor Deposition and Device Integration

2016

Graphene nanoribbons (GNRs), quasi-one-dimensional graphene strips, have shown great potential for nanoscale electronics, optoelectronics, and photonics. Atomically precise GNRs can be "bottom-up" synthesized by surface-assisted assembly of molecular building blocks under ultra-high-vacuum conditions. However, large-scale and efficient synthesis of such GNRs at low cost remains a significant challenge. Here we report an efficient "bottom-up" chemical vapor deposition (CVD) process for inexpensive and high-throughput growth of structurally defined GNRs with varying structures under ambient-pressure conditions. The high quality of our CVD-grown GNRs is validated by a combination of different …

CMOS-compatible nanoscale gas-sensor based on field effect

2009

The integration of a solid state gas sensor of the metal oxide sensor type into CMOS technology still is a challenge because of the high temperatures during metal oxide annealing and sensor operation that do not comply with silicon device stability. In the presence of an external electric field sensor sensitivity can be controlled through a change of the Fermi energy level and consequently it is possible to reduce the operation temperature. Based in this effect, a novel field effect gas sensor was developed resembling a reversed insulated : gate field effect transistor (IGFET) with the thickness of gas sensing layer in the range of the Debye length (L D ). Under these conditions the control…